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J668 View Datasheet(PDF) - Toshiba

Part Name
Description
View to exact match
J668 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn-on time
Switching time
Fall time
Turn-off time
Total gate charge (gate-source
plus gate-drain)
Gate-source charge
Gate-drain (“Miller”) charge
Symbol
Test Condition
IGSS
IDSS
V (BR) DSS
V (BR) DSX
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
tr
ton
VGS = ±16 V, VDS = 0 V
VDS = 60 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
ID = 10 mA, VGS = 20 V
VDS = 10 V, ID = 1 mA
VGS = 4 V, ID = 2.5 A
VGS = 10 V, ID = 2.5 A
VDS = 10 V, ID = 2.5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
0V
VGS
10 V
ID = 2.5 A
Output
RL = 12 Ω
tf
VDD 30 V
toff
Duty 1%, tw = 10 μs
Qg
Qgs
VDD ≈ −48 V, VGS = 10 V, ID = 5 A
Qgd
2SJ668
Min Typ. Max Unit
±10
μA
100 μA
60 —
V
35 —
V
0.8 —
2.0
V
— 0.16 0.25
— 0.12 0.17
2.5 5.0
S
— 700 —
60
pF
90
14
24
ns
14
95
15
11
nC
4
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 5 A, VGS = 0 V
IDR = 5 A, VGS = 0 V
dlDR / dt = 50 A/μs
Min Typ. Max Unit
5
A
20
A
1.7
V
40
ns
32
nC
Marking
J668
Part No.
(or abbreviation code)
Lot No.
Note 4
Note 4 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
2
2009-07-13
 

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