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K1057 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K1057 Silicon N-Channel MOS FET Hitachi
Hitachi -> Renesas Electronics Hitachi
K1057 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Drain to Source Saturation
Voltage vs. Drain Current
10
VGD = 0
5
25°C
75°C
=
–25°C
TC
2
1.0
0.5
0.2
0.1
0.1 0.2
0.5 1.0 2
5 10
Drain Current ID (A)
1000
Input Capacitance vs. Gate
Source Voltage
500
200
100
0
VDS = 10 V
f = 1 MHz
–2 –4 –6 –8 –10
Gate to Source Voltage VGS (V)
2SK1056, 2SK1057, 2SK1058
Drain to Source Voltage vs.
Gate to Source Voltage
10
8
TC = 25°C
6
5A
4
2
2A
ID = 1 A
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Forward Transfer Admittance
vs. Frequency
3.0
1.0
0.3
0.1
0.03
0.01
TC = 25°C
VDS = 10 V
ID = 2 A
0.003
10 k 30 k 100 k 300 k 1 M 3 M 10 M
Frequency f (Hz)
5
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