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K1058 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part NameDescriptionManufacturer
K1058 Silicon N-Channel MOS FET Hitachi
Hitachi -> Renesas Electronics Hitachi
K1058 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
2SK1056, 2SK1057, 2SK1058
Power vs. Temperature Derating
150
100
50
0
50
100
150
Case Temperature TC (°C)
Typical Output Characteristics
10
8
VGS = 10 V
9
TC = 25°C
8
6
7
6
4
5
2
4
Pch
3
=
100
W
2
1
0
0
10 20 30 40 50
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
20
Ta = 25°C
10
5
2
ID
max
(Continuous)
PW =PW1 sP=W11=0s0h1o0mtmss11sshhoott
1.0
0.5
2SK1056 2SK1057
0.2
5 10 20
2SK1058
50 100 200 500
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
1.0
VDS = 10 V
0.8
0.6
0.4
0.2
0
0.4 0.8 1.2 1.6 2.0
Gate to Source Voltage VGS (V)
4
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