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K1056 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part NameDescriptionManufacturer
K1056 Silicon N-Channel MOS FET Hitachi
Hitachi -> Renesas Electronics Hitachi
K1056 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Drain to source
2SK1056 V(BR)DSX 120
breakdown voltage 2SK1057
140
2SK1058
160
Gate to source breakdown
voltage
V(BR)GSS ±15
Gate to source cutoff voltage VGS(off) 0.15 —
Drain to source saturation
voltage
VDS(sat)
Forward transfer admittance |yfs|
0.7
1.0
Input capacitance
Ciss —
600
Output capacitance
Coss —
350
Reverse transfer capacitance Crss —
10
Turn-on time
Turn-off time
Note: 1. Pulse test
t on
180
t off
60
2SK1056, 2SK1057, 2SK1058
Max
Unit
V
Test conditions
ID = 10 mA, VGS = –10 V
V
1.45 V
12
V
1.4
S
pF
pF
pF
ns
ns
IG = ±100 µA, VDS = 0
ID = 100 mA, VDS = 10 V
ID = 7 A, VGD = 0 *1
ID = 3 A, VDS = 10 V *1
VGS = –5 V, VDS = 10 V,
f = 1 MHz
VDD = 20 V, ID = 4 A,
3
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