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J496 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name
Description
View to exact match
J496
Hitachi
Hitachi -> Renesas Electronics Hitachi
J496 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
2SJ496
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Drain to source breakdown
voltage
V(BR)DSS
Gate to source breakdown
voltage
V(BR)GSS
Zero gate voltege drain
I DSS
current
Gate to source leak current IGSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
RDS(on)
Min
–60
±20
–1.0
Forward transfer admittance |yfs|
3
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance Crss
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
Body to drain diode forward VDF
voltage
Body to drain diode reverse trr
recovery time
Note: 1. Pulse test
Typ
0.12
0.17
5
600
290
80
10
25
95
55
–1.0
65
Max
–10
±10
–2.0
0.16
0.24
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = –10mA, VGS = 0
IG = ±100µA, VDS = 0
VDS = –60 V, VGS = 0
VGS = ±16V, VDS = 0
ID = –1mA, VDS = –10V
ID = –2.5A
VGS = –10V*1
ID = –2.5A
VGS = –4V*1
ID = 2.5A, VDS = 10V*1
VDS = –10V
VGS = 0
f = 1MHz
VGS = –10V, ID = –2.5A
RL = 12
ID = –5A, VGS = 0
IF = –5A, VGS = 0
diF/ dt = 50A/µs
3
 

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