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K1061 Просмотр технического описания (PDF) - Toshiba

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K1061 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Toshiba
Toshiba Toshiba
K1061 Datasheet PDF : 5 Pages
1 2 3 4 5
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1061
High Speed Switching Applications
Analog Switch Applications
Interface Applications
2SK1061
Unit: mm
Excellent switching times: ton = 14 ns (typ.)
High forward transfer admittance: |Yfs| = 100 mS (min)
Low on resistance: RDS (ON) = 0.6 (typ.)
Enhancement-mode
Complementary to 2SJ167
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS
60
V
Gate-source voltage
VGSS
±20
V
DC
ID
Drain current
Pulse
IDP
Drain power dissipation (Ta = 25°C)
PD
Channel temperature
Tch
Storage temperature range
Tstg
200
mA
800
300
mW
150
°C
55~150
°C
JEDEC
JEITA
TOSHIBA
2-4E1E
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.13 g (typ.)
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01
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