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J248-E Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza
componentes Descripción
fabricante
J248-E
Renesas
Renesas Electronics Renesas
J248-E Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SJ248
Static Drain to Source on State Resistance
vs. Temperature
1.0
Pulse Test
0.8
ID = –10 A
0.6
–5 A
0.4 VGS = –4 V
0.2
–10 V
–2 A
–10 A
–2 A, –5 A
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
5
–0.2
–0.5 –1
di / dt = 50 A / µs
VGS = 0
–2 –5 –10 –20
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
0
0
VDD = –10 V
–25 V
–20
–50 V
–4
–40
VDS
–60
VDD = –50 V
–8
–25 V
VGS
–10 V –12
–80
ID = –8 A
–100
0
10
20
30 40
Gate Charge Qg (nc)
–16
–20
40
Forward Transfer Admittance vs.
Drain Current
50
VDS = –10 V
Pulse Test
20
10
Tc = –25°C
5
25°C
2
75°C
1
0.5
–0.1 –0.2 –0.5 –1 –2
–5 –10
Drain Current ID (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
Ciss
300
Coss
100
Crss
30
VGS = 0
f = 1 MHz
10
0 –10 –20 –30 –40 –50
Drain to Source Voltage VDS (V)
Switching Characteristics
500
200
td(off)
100
tf
50
20
tr
td(on)
10 VGS = –10 V, VDD = –30 V
PW = 2 µs, duty 1 %
5
–0.1 –0.2 –0.5 –1 –2
–5 –10
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 6
 

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