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J248 Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza
componentes Descripción
fabricante
J248
Renesas
Renesas Electronics Renesas
J248 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SJ248
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
Symbol
VDSS
VGSS
ID
ID (pulse) Note 1
IDR
Pch Note 2
Tch
Tstg
Value
–100
±20
–8
–32
–8
25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery time
Note: 3. Pulse test
Symbol
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (off)
RDS (on)
RDS (on)
|yfs|
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VDF
trr
Min
–100
±20
–1.0
3.0
Typ
0.25
0.3
5.5
880
325
80
12
47
150
75
–1.0
170
Max
±10
–250
–2.0
0.3
0.45
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = –80 V, VGS = 0
ID = –1 mA, VDS = –10 V
ID = –4 A, VGS = –10 V Note 3
ID = –4 A, VGS = –4 V Note 3
ID = –4 A, VDS = –10 V Note 3
VDS = –10 V
VGS = 0
f = 1 MHz
ID = –4 A
VGS = –10 V
RL = 2
IF = –8 A, VGS = 0
IF = –8 A, VGS = 0
diF/dt = 50 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6
 

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