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2SJ244 View Datasheet(PDF) - Renesas Electronics

Part Name
Description
View to exact match
2SJ244
Renesas
Renesas Electronics Renesas
2SJ244 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SJ244
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
Channel dissipation
ID
ID (pulse) Note 1
Pch Note 2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 100 µs, duty cycle 10%
2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)
Value
–12
±7
±2
±4
1
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Turn-off delay time
Body to drain diode forward voltage
Note: 3. Pulse test
Symbol
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (off)
RDS (on) 1
RDS (on) 2
|yfs|
Ciss
Coss
Crss
td (on)
td (off)
VDF
Min
–12
±7
–0.4
Typ
0.65
0.5
1.8
100
168
35
365
1450
Max
±5
–1
–1.4
0.9
7
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
V
(Ta = 25°C)
Test Conditions
ID = –1 mA, VGS = 0
IG = ±10 µA, VDS = 0
VGS = ±6 V, VDS = 0
VDS = –8 V, VGS = 0
ID = –100 µA, VDS = –5 V
ID = –0.5 A, VGS = –2.5 V Note 3
ID = –1 A, VGS = –4 V Note 3
ID = –1 A, VDS = –5 V Note 3
VDS = –5 V
VGS = 0
f = 1 MHz
ID = –0.2 A Note 3
Vin = –4 V, RL = 51
IF = 4 A Note 3, VGS = 0
Rev.2.00 Sep 07, 2005 page 2 of 6
 

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