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J221 Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza
componentes Descripción
fabricante
J221
Renesas
Renesas Electronics Renesas
J221 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SJ221
Static Drain to Source on State Resistance
vs. Case Temperature
1.0
Pulse Test
0.8
0.6
ID = –20 A
–5 V, –10 A
0.4
VGS = –4 V
0.2
0
–40
–10 V
0
40
–20 A
–5 V, –10 A
80 120 160
Case Temperature Tc (°C)
5000
3000
1000
Body-Drain Diode Reverse
Recovery Time
300
100
30
10
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
5
–0.1 –0.3 –1 –3 –10 –30 –100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
0
0
VDD = –10 V
–25 V
–20
–50 V
–4
–40
VDS
–60
VGS
VDD = –50 V
–8
–25 V
–10 V
–12
–80
ID = –20 A
–100
0
20
40
60 80
Gate Charge Qg (nc)
–16
–20
100
Forward Transfer Admittance vs.
Drain Current
100
30
–25°C
Tc = 25°C
10
3
75°C
1
0.3
VDS = –10 V
Pulse Test
0.1
–0.1 –0.3 –1 –3 –10 –30 –100
Drain Current ID (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
300
100
Ciss
Coss
Crss
30
VGS = 0
f = 1 MHz
10
0 –10 –20 –30 –40 –50
Drain to Source Voltage VDS (V)
5000
3000
1000
300
100
Switching Characteristics
VGS = –10 V, VDD = –30 V
PW = 2 µs, duty 1 %
td(off)
tf
30
tr
10
5
–0.1 –0.3 –1
td(on)
–3 –10 –30 –100
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 6
 

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