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J221 Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza
componentes Descripción
fabricante
J221
Renesas
Renesas Electronics Renesas
J221 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SJ221
Main Characteristics
Power vs. Temperature Derating
120
80
40
0
0
50
100
150
Case Temperature Tc (°C)
Typical Output Characteristics
–50
–10 V
–6 V
–8 V
Pulse Test
–40
–5 V
–30
–4 V
–20
–10
VGS = –3 V
0
0
–4 –8 –12 –16 –20
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–10
Pulse Test
–8
–6
–4
–20 A
–2
–10 A
ID = –5 A
0
0
–4
–8 –12 –16 –20
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
–100
–30
–10
–3
–1
OtlihmpisietearadrDetCiboaOynipsReinraDtSion(o(nT1)c1m=0s0215µ0°sCµ)s
–0.3
Ta = 25°C
–0.1
–1 –3 –10 –30 –100 –300 –1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
–20
VDS = –10 V
Pulse Test
–16
–12
–8
–4
75°C
Tc = 25°C
–25°C
0
0
–1 –2 –3 –4 –5
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
5
3 Pulse Test
1
0.3
VGS = –4 V
0.1
–10 V
0.03
0.01
0.005
–0.1 –0.3 –1 –3 –10 –30 –100
Drain Current ID (A)
 

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