J210 View Datasheet(PDF) - Renesas Electronics

Part Name

Description

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J210

P-CHANNEL MOSFET FOR SWITCHING

Renesas Electronics 

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ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

Zero Gate Voltage Drain Current

Gate Leakage Current

Gate Cut-off Voltage

Forward Transfer Admittance Note

Drain to Source On-state Resistance Note

IDSS

IGSS

VGS(off)

| yfs |

RDS(on)1

VDS = −60 V, VGS = 0 V

VGS = m20 V, VDS = 0 V

VDS = −5.0 V, ID = −1.0 µA

VDS = −5.0 V, ID = −10 mA

VGS = −4.0 V, ID = −10 mA

RDS(on)2 VGS = −10 V, ID = −10 mA

Input Capacitance

Ciss

VDS = −5.0 V

Output Capacitance

Coss

VGS = 0 V

Reverse Transfer Capacitance

Crss

f = 1 MHz

Turn-on Delay Time

td(on)

VGS = −4.0 V, RG = 10 Ω

Rise Time

tr

VDD = −5.0 V

Turn-off Delay Time

td(off)

ID = −10 mA

Fall Time

tf

Note Pulsed

TEST CIRCUIT SWITCHING TIME

D.U.T.

RG

PG.

VGS(−)

0

τ

τ = 1 µs

Duty Cycle ≤ 1%

RL

VDD

VGS(−)

VGS

Wave Form

10%

0

VGS

90%

ID(−)

90%

ID

Wave Form

0 10%

td(on)

ID

tr td(off)

90%

10%

tf

ton

toff

2SJ210

MIN. TYP. MAX. UNIT

−1.0 µA

m1.0 µA

−1.4 −1.8 −2.4 V

20 45

mS

10

15

Ω

6

10

Ω

27

pF

21

pF

3

pF

120

ns

190

ns

150

ns

180

ns

2

Data Sheet D17906EJ3V0DS

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