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J210 View Datasheet(PDF) - Renesas Electronics

Part NameDescriptionManufacturer
J210 P-CHANNEL MOSFET FOR SWITCHING Renesas
Renesas Electronics Renesas
J210 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
<R>
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
VDS = 60 V, VGS = 0 V
VGS = m20 V, VDS = 0 V
VDS = 5.0 V, ID = 1.0 µA
VDS = 5.0 V, ID = 10 mA
VGS = 4.0 V, ID = 10 mA
RDS(on)2 VGS = 10 V, ID = 10 mA
Input Capacitance
Ciss
VDS = 5.0 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss
f = 1 MHz
Turn-on Delay Time
td(on)
VGS = 4.0 V, RG = 10
Rise Time
tr
VDD = 5.0 V
Turn-off Delay Time
td(off)
ID = 10 mA
Fall Time
tf
Note Pulsed
TEST CIRCUIT SWITCHING TIME
D.U.T.
RG
PG.
VGS()
0
τ
τ = 1 µs
Duty Cycle 1%
RL
VDD
VGS()
VGS
Wave Form
10%
0
VGS
90%
ID()
90%
ID
Wave Form
0 10%
td(on)
ID
tr td(off)
90%
10%
tf
ton
toff
2SJ210
MIN. TYP. MAX. UNIT
1.0 µA
m1.0 µA
1.4 1.8 2.4 V
20 45
mS
10
15
6
10
27
pF
21
pF
3
pF
120
ns
190
ns
150
ns
180
ns
2
Data Sheet D17906EJ3V0DS
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