MOS FIELD EFFECT TRANSISTOR
The 2SJ210, P-channel vertical type MOSFET, is a switching
device which can be driven directly by the output of ICs having a
5 V power source.
The 2SJ210 has excellent switching characteristics and is
suitable as a high-speed switching device in digital circuits.
• Directly driven by the output of ICs having a 5 V power source.
• Not necessary to consider driving current because of its high
• Possible to reduce the number of parts by omitting the bias
PACKAGE DRAWING (Unit: mm)
SC-59 (Mini Mold)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) Note
Total Power Dissipation
Tstg −55 to +150 °C
Note PW ≤ 10 ms, Duty Cycle ≤ 50%
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17906EJ3V0DS00 (3rd edition)
(Previous No. TC-2293A)
Date Published February 2006 NS CP(K)
Printed in Japan
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