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J387 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name
Description
View to exact match
J387
Hitachi
Hitachi -> Renesas Electronics Hitachi
J387 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
2SJ387(L), 2SJ387(S)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–0.5
Pulse Test
–0.4
–0.3
I D = –5 A
–0.2
–0.1
–2 A
–1 A
0
–2 –4 –6 –8 –10
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.2
0.1
VGS = –2.5 V
0.05
–4 V
0.02
0.01
–0.5 –1 –2 –5 –10 –20 –50
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
0.2
Pulse Test
0.16
0.12
VGS = –2.5 V
0.08
I D = –5 A
–1, –2 A
–5 A
0.04
–4 V
–1 A –2 A
0
–40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
50
20
Tc = –25 °C
10
25 °C
5
75 °C
2
1
0.5
–0.1 –0.2 –0.5 –1
Drain Current
V DS = –10 V
Pulse Test
–2 –5 –10
I D (A)
5
 

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