J350 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
View to exact match
J350 Datasheet PDF : 9 Pages
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1000
500
Body–Drain Diode Reverse
Recovery Time
200
100
50
20
di / dt = 50 A / µs, V GS = 0
Ta = 25 °C, Pulse Test
10
–0.1 –0.2 –0.5 –1 –2 –5 –10
Reverse Drain Current I DR (A)
2SJ350
5000
Typical Capacitance vs.
Drain to Source Voltage
2000
1000
500
200
100
50
Ciss
Coss
Crss
20 VGS = 0
10 f = 1 MHz
0 –10 –20 –30 -40 –50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
0
0
VDD = –25 V
–50 V
–40
–80 V
–4
I D = –6 A
–80
V DS
–120
–8
VDD = –25 V
–50 V
–80 V
–12
–160
–200
0
V GS
–16
20 40 60 80
Gate Charge Qg (nc)
–20
100
Switching Characteristics
500
V GS = –10 V, V DD = –30 V
PW = 2 µs, duty < 1 %
200
t d(off)
100
50
tf
20
tr
t d(on)
10
5
–0.05 –0.1 –0.2 –0.5 –1 –2 –5 –10
Drain Current I D (A)
5
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