2SJ245 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
View to exact match
2SJ245 Datasheet PDF : 8 Pages
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2SJ245 L , 2SJ245 S
Body to Drain Diode Reverse Recovery Time
1000
500
200
100
50
di/dt = 50 A/µs
VGS = 0
20
Ta = 25°C
Pulse test
10
–0.1 –0.2 –0.5 –1 –2 –5 –10
Reverse Drain Current I DR (A)
2000
1000
500
Typical Capacitance vs.
Drain to Source Voltage
Ciss
200
Coss
100
Crss
50
VGS = 0
f = 1 MHz
20
0 –10 –20 –30 –40 –50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
0
0
VDD= –10 V
–25 V
–20
–50 V
–4
–40
VDS
–60
VDD= –50 V
–25 V
–8
–10 V
–12
–80
VGS
–100
0
I D= –5 A
8
16 24 32
Gate Charge Qg (nc)
–16
–20
40
Switching Characteristics
500
200
t d(off)
100
VGS = –10 V
50 VDD= –30 V
PW = 2 µs
duty ≤ 1%
20
10
tf
tr
t d (on)
5
–0.1 –0.2 –0.5 –1 –2 –5 –10
Drain Current I D (A)
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