2SJ245 L , 2SJ245 S
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max Unit Test conditions
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Drain to source breakdown
V(BR)DSS –60
—
voltage
—
V
ID = –10 mA, VGS = 0
———————————————————————————————————————————–
Gate to source breakdown
voltage
V(BR)GSS ±20
—
—
V
IG = ±100 µA, VDS = 0
———————————————————————————————————————————–
Gate to source leak current
IGSS
—
—
±10 µA VGS = ±16 V, VDS = 0
———————————————————————————————————————————–
Zero gate voltage drain current IDSS
—
—
–100 µA VDS = –50 V, VGS = 0
———————————————————————————————————————————–
Gate to source cutoff voltage VGS(off)
–1.0 —
–2.0 V
ID = –1 mA, VDS = –10 V
———————————————————————————————————————————–
Static drain to source on state RDS(on)
resistance
—
0.2
0.25 Ω ID = –3 A
VGS = –10 V *
————————————————————————–
—
0.28 0.38 Ω ID = –3 A
VGS = –4 V *
———————————————————————————————————————————–
Forward transfer admittance |yfs|
2.2
3.7
—
S
ID = –3 A
VDS = –10 V *
———————————————————————————————————————————–
Input capacitance
Ciss
—
610
—
pF VDS = –10 V
————————————————————————————————
Output capacitance
Coss
—
315
—
pF VGS = 0
————————————————————————————————
Reverse transfer capacitance Crss
—
95
—
pF f = 1 MHz
———————————————————————————————————————————–
Turn–on delay time
td(on)
—
12
—
ns ID = –3 A
————————————————————————————————
Rise time
tr
—
45
—
ns VGS = –10 V
————————————————————————————————
Turn–off delay time
td(off)
—
170
—
ns RL = 10 Ω
————————————————————————————————
Fall time
tf
—
90
—
ns
———————————————————————————————————————————–
Body–drain diode forward
VDF
voltage
—
–1.1 —
V
IF = –5 A, VGS = 0
———————————————————————————————————————————–
Body–drain diode reverse
trr
recovery time
—
160
—
ns IF = –5 A, VGS = 0,
diF / dt = 50 A / µs
———————————————————————————————————————————–