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J221 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza
componentes Descripción
fabricante
J221
Hitachi
Hitachi -> Renesas Electronics Hitachi
J221 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
5,000
3,000
1,000
Body to Drain Diode Reverse
Recovery Time
di/dt = 50 A/µs, Ta = 25°C
VGS = 0,
300
100
30
10
5
–0.1 –0.3 –1 –3 –10 –30 –100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
0
0
VDD = –10 V
–25 V
ID = –20 A
–20
–50 V
–4
–40
VDS
–60
–80
VDD = –50 V
–8
–25 V
–10 V
–12
VGS
–16
–100
0
20 40 60 80
Gate Charge Qg (nc)
–20
100
10,000
1,000
100
2SJ221
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
VGS = 0
f = 1 MHz
Crss
10
0 –10 –20 –30 –40 –50
Drain to Source Voltage VDS (V)
5,000
3,000
1,000
300
100
30
10
Switching Characteristics
VGS = 10 V, VDD =.. –30 V
PW = 2 µs, duty <= 1%
td (off)
tf
tr
td (on)
5
–0.1 –0.3 –1 –3 –10 –30
Drain Current ID (A)
–100
 

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