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J218 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza
componentes Descripción
fabricante
J218
Hitachi
Hitachi -> Renesas Electronics Hitachi
J218 Datasheet PDF : 5 Pages
1 2 3 4 5
2SJ218
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS –60
Gate to source breakdown
voltage
V(BR)GSS ±20
Gate to source leak current
I GSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
–1.0
Forward transfer admittance |yfs|
16
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
Body to drain diode forward VDF
voltage
Body to drain diode reverse trr
recovery time
Note: 1. Pulse test
Typ Max Unit
V
V
±10 µA
–250 µA
–2.0 V
0.033 0.042
0.045 0.06
25
S
3800 —
pF
2000 —
pF
490 —
pF
30
ns
235 —
ns
670 —
ns
450 —
ns
–1.35 —
V
300 —
ns
Test conditions
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = –50 V, VGS = 0
ID = –1 mA, VDS = –10 V
ID = –20 A, VGS = –10 V*1
ID = –20 A, VGS = –4 V*1
ID = –20 A, VDS = –10 V*1
VDS = –10 V, VGS = 0,
f = 1 MHz
ID = –20 A, VGS = –10 V,
RL = 1.5
IF = –45 A, VGS = 0
IF = –45 A, VGS = 0,
diF/dt = 50 A/µs
See characteristic curves of 2SJ217
3
 

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