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Part Name
Description
2SJ182S View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
View to exact match
2SJ182S
Silicon P-Channel MOS FET
Hitachi -> Renesas Electronics
2SJ182S Datasheet PDF : 10 Pages
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2SJ181(L), 2SJ181(S)
Forward Transfer Admittance vs.
Drain Current
2
1000
Body–Drain Diode Reverse
Recovery Time
1
Tc = –25 °C
500
0.5
25 °C
200
0.2
75 °C
100
0.1
50
0.05
0.02
–0.05 –0.1 –0.2 –0.5
Drain Current
V
DS
= –20 V
Pulse Test
–1 –2 –5
I
D
(A)
20
di / dt = 100 A / µs
10
V
GS
= 0, Ta = 25 °C
–0.05 –0.1 –0.2 –0.5 –1 –2 –5
Reverse Drain Current I
DR
(A)
1000
300
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Ciss
100
Coss
30
10
Crss
3
1
0 –10 –20 –30 -40 –50
Drain to Source Voltage V
DS
(V)
5
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