datasheetbank_Logo
búsqueda de Hoja de datos y gratuito Fichas de descarga

J182S Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza
componentes Descripción
fabricante
J182S
Hitachi
Hitachi -> Renesas Electronics Hitachi
J182S Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
2SJ181(L), 2SJ181(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
Unit
–600
V
±15
V
–0.5
A
–1.0
A
–0.5
A
20
W
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS –600
Gate to source breakdown
voltage
V(BR)GSS ±15
Gate to source leak current
I GSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
–2.0
Forward transfer admittance |yfs|
0.3
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
Body to drain diode forward VDF
voltage
Body to drain diode reverse trr
recovery time
Note: 1. Pulse test
Typ Max
±10
–100
–4.0
15
25
0.45 —
220 —
55
13
7
20
35
35
–0.85 —
230 —
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±12 V, VDS = 0
VDS = –500 V, VGS = 0
ID = –1 mA, VDS = –10 V
ID = –0.3 A, VGS = –10 V*1
ID = –0.3 A, VDS = –20 V*1
VDS = –10 V, VGS = 0,
f = 1 MHz
ID = –0.3 A, VGS = –10 V,
RL = 100
IF = –0.5 A, VGS = 0
IF = –0.5 A, VGS = 0,
diF/dt = 50 A/µs
2
 

Share Link: 

datasheetbank.com [ Política De Privacidad ]