J172 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
fabricante
2SJ172
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
Unit
–60
V
±20
V
–10
A
–40
A
–10
A
40
W
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS –60
Gate to source breakdown
voltage
V(BR)GSS ±20
Gate to source leak current
I GSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
—
—
–1.0
—
—
Forward transfer admittance |yfs|
4.0
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
t d(on)
—
Rise time
tr
—
Turn-off delay time
t d(off)
—
Fall time
tf
—
Body to drain diode forward VDF
—
voltage
Body to drain diode reverse trr
—
recovery time
Note 1. Pulse test
Typ
—
—
—
—
—
0.13
0.18
6.5
900
460
130
8
65
170
105
–1.1
200
Max
—
—
±10
250
–2.0
0.18
0.25
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = –50 V, VGS = 0
ID = –1 mA, VDS = –10 V
ID = –5 A, VGS = –10 V*1
ID = –5 A, VGS = –4 V*1
ID = –5 A, VDS = –10 V*1
VDS = –10 V, VGS = 0,
f = 1 MHz
ID = –5 A, VGS = –10 V,
RL = 6 Ω
IF = –10 A, VGS = 0
IF = –10 A, VGS = 0,
diF/dt = 50 A/µs
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