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J172 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza
componentes Descripción
fabricante
J172
Hitachi
Hitachi -> Renesas Electronics Hitachi
J172 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SJ172
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
Unit
–60
V
±20
V
–10
A
–40
A
–10
A
40
W
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS –60
Gate to source breakdown
voltage
V(BR)GSS ±20
Gate to source leak current
I GSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
–1.0
Forward transfer admittance |yfs|
4.0
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
Body to drain diode forward VDF
voltage
Body to drain diode reverse trr
recovery time
Note 1. Pulse test
Typ
0.13
0.18
6.5
900
460
130
8
65
170
105
–1.1
200
Max
±10
250
–2.0
0.18
0.25
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = –50 V, VGS = 0
ID = –1 mA, VDS = –10 V
ID = –5 A, VGS = –10 V*1
ID = –5 A, VGS = –4 V*1
ID = –5 A, VDS = –10 V*1
VDS = –10 V, VGS = 0,
f = 1 MHz
ID = –5 A, VGS = –10 V,
RL = 6
IF = –10 A, VGS = 0
IF = –10 A, VGS = 0,
diF/dt = 50 A/µs
2
 

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