2SJ192
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
PW≤10µs, duty cycle≤1%
Tc=25˚C
Parameter
Drain-to-Source Breakdown Voltage
Gate-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Symbol
Conditions
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
ID=–1mA, VGS=0
IG=±100µA, VDS=0
VDS=–60V, VGS=0
VGS=±12V, VDS=0
VDS=–10V, ID=–1mA
VDS=–10V, ID=–2A
ID=–2A, VGS=–10V
ID=–2A, VGS=–4V
VDS=–20V, f=1MHz
VDS=–20V, f=1MHz
VDS=–20V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
IS=–4A, VGS=0
Switching Time Test Circuit
Ratings
Unit
–60 V
±15 V
–4 A
–16 A
30 W
150 ˚C
–55 to +150 ˚C
Ratings
Unit
min
typ
max
–60
V
±15
V
–100 µA
±10 µA
–1.0
–2.0 V
2.5
4
S
0.15
0.2 Ω
0.2 0.27 Ω
950
pF
300
pF
75
pF
15
ns
35
ns
115
ns
95
ns
–1.0 –1.5 V
No.3765–2/4