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2SJ305 View Datasheet(PDF) - Toshiba

Part Name
Description
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2SJ305 Datasheet PDF : 5 Pages
1 2 3 4 5
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ305
High Speed Switching Applications
Analog Applications
· High input impedance
· Low gate threshold voltage.: Vth = 0.5~−1.5 V
· Excellent switching times.: ton = 0.06 µs (typ.)
toff = 0.15 µs (typ.)
· Low drain-source ON resistance: RDS (ON) = 2.4 (typ.)
· Small package.
· Complementary to 2SK2009
2SJ305
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
VDS
VGSS
ID
PD
Tch
Tstg
-30
V
±20
V
-200
mA
200
mW
150
°C
-55~150
°C
Note: This transistor is electrostatic sensitive device.
Please handle with caution.
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1F
Weight: 0.012 g (typ.)
Marking
Equivalent Circuit
1
2003-03-27
 

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