2SJ201 View Datasheet(PDF) - Toshiba

Part Name

Description

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2SJ201

Silicon P Channel MOS Type Field Effect Transistor

Toshiba 

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

2SJ201

High-Power Amplifier Application

z High breakdown voltage

z High forward transfer admittance

z Complementary to 2SK1530

: VDSS = −200 V

: |Yfs| = 5.0 S (typ.)

2SJ201

Unit: mm

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain−source voltage

Gate−source voltage

Drain current

(Note 1)

Drain power dissipation (Tc = 25°C)

Channel temperature

Storage temperature range

VDSS

VGSS

ID

PD

Tch

Tstg

−200

V

±20

V

−12

A

150

W

150

°C

−55 to 150

°C

JEDEC

―

JEITA

―

TOSHIBA

2-21F1B

Weight: 9.75 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

1

2009-12-10

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