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J200Y Ver la hoja de datos (PDF) - Toshiba

Número de pieza
componentes Descripción
fabricante
J200Y Datasheet PDF : 5 Pages
1 2 3 4 5
2SJ200
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Drain cutoff current
Gate leakage current
Drainsource breakdown voltage
Gatesource cutoff voltage
(Note 2)
Drainsource saturation voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
IDSS
IGSS
V (BR) DSS
VGS (OFF)
VDS (ON)
|Yfs|
Ciss
Coss
Crss
VDS = 180 V, VGS = 0
VDS = 0, VGS = ±20 V
ID = 10 mA, VGS = 0
VDS = 10 V, ID = 0.1 A
ID = 6 A, VGS = 10 V
VDS = 10 V, ID = 3 A
VDS = 30 V, VGS = 0, f = 1 MHz
VDS = 30 V, VGS = 0, f = 1 MHz
VDS = 30 V, VGS = 0, f = 1 MHz
― −1.0 mA
±0.5 μA
180
V
0.8 ― −2.8
V
― −1.5 5.0
V
4.0
S
1300
350
pF
200
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VGS (OFF) Classification
O: 0.8~1.6, Y: 1.4~2.8
This transistor is an electrostatic sensitive device. Please handle with caution.
Marking
2
2006-11-16
 

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