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J200O View Datasheet(PDF) - Toshiba

Part NameDescriptionManufacturer
J200O TOSHIBA Field Effect Transistor Silicon P Channel MOS Type Toshiba
Toshiba Toshiba
J200O Datasheet PDF : 5 Pages
1 2 3 4 5
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ200
High Power Amplifier Application
z High breakdown voltage
z High forward transfer admittance
z Complementary to 2SK1529
: VDSS = 180 V
: |Yfs| = 4.0 S (typ.)
2SJ200
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
Gatesource voltage
Drain current
(Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS
VGSS
ID
PD
Tch
Tstg
180
V
±20
V
10
A
120
W
150
°C
55~150
°C
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
JEITA
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1
2006-11-16
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