2SJ168 View Datasheet(PDF) - Toshiba
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Description
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2SJ168 Datasheet PDF : 5 Pages
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ168
High Speed Switching Applications
Analog Switch Applications
Interface Applications
2SJ168
Unit: mm
• Excellent switching time: ton = 14 ns (typ.)
• High forward transfer admittance: |Yfs| = 100 mS (min)
@ID = −50 mA
• Low on resistance: RDS (ON) = 1.3 Ω (typ.) @ ID = −50 mA
• Enhancement-mode
• Complementary to 2SK1062
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
−60
V
±20
V
−200
mA
−800
200
mW
150
°C
−55~150
°C
JEDEC
―
JEITA
SC-59
TOSHIBA
2-3F1F
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: This transistor is the electrostatic sensitive device. Please handle with caution.
Marking
1
2007-11-01
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