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J167 Ver la hoja de datos (PDF) - Toshiba

Número de pieza
componentes Descripción
fabricante
J167 Datasheet PDF : 5 Pages
1 2 3 4 5
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Drain-source ON voltage
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
Test Condition
IGSS
IDSS
V (BR) DSS
Vth
Yfs
RDS (ON)
VDS (ON)
Ciss
Crss
Coss
VGS = ±10 V, VDS = 0
VDS = −60 V, VGS = 0
ID = −1 mA, VGS = 0
VDS = −10 V, ID = −1 mA
VDS = −10 V, ID = −50 mA
ID = −50 mA, VGS = −10 V
ID = −50 mA, VGS = −10 V
VDS = −10 V, VGS = 0, f = 1 MHz
VDS = −10 V, VGS = 0, f = 1 MHz
VDS = −10 V, VGS = 0, f = 1 MHz
tr
Turn-on time
ton
Switching time
Fall time
tf
Turn-off time
VIN: tr, tf < 5 ns
toff
D.U. <= 1% (Zout = 50 Ω)
Note: This transistor is the electrostatic sensitive device.
Please handle with caution.
2SJ167
Min Typ. Max Unit
⎯ ±100 nA
10
μA
60
V
2
3.5
V
100
mS
1.3 2.0
Ω
65 100 mV
73
85
pF
15
22
pF
48
60
pF
8
14
ns
35
100
2
2007-11-01
 

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