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J167 Ver la hoja de datos (PDF) - Toshiba

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J167 Datasheet PDF : 5 Pages
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ167
High Speed Switching Applications
Analog Switch Applications
Interface Applications
2SJ167
Unit: mm
Excellent switching time: ton = 14 ns (typ.)
High forward transfer admittance: |Yfs| = 100 mS (min)
Low on resistance: RDS (ON) = 1.3 (typ.)
Enhancement-mode
Complementary to 2SK1061
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
60
V
Gate-source voltage
VGSS
±20
V
DC
ID
Drain current
Pulse
IDP
Drain power dissipation (Ta = 25°C)
PD
Channel temperature
Tch
Storage temperature range
Tstg
200
mA
800
300
mW
150
°C
55~150
°C
JEDEC
JEITA
TOSHIBA
2-4E1E
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.13 g (typ.)
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01
 

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