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J108 Ver la hoja de datos (PDF) - Toshiba

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J108 Datasheet PDF : 5 Pages
1 2 3 4 5
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ108
2SJ108
Low Noise Audio Amplifier Applications
Recommended for first stages of EQ amplifiers and MC head
amplifiers.
High |Yfs|: |Yfs| = 22 mS (typ.)
(VDS = 10 V, VGS = 0, IDSS = 3 mA)
Low noise: En = 0.95 nV/Hz1/2 (typ.)
(VDS = 10 V, ID = 1 mA, f = 1 kHz)
High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V)
Complementary to 2SK370
Small package
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
25
V
Gate current
IG
10
mA
Drain power dissipation
PD
200
mW
Junction temperature
Storage temperature range
Tj
125
°C
JEDEC
Tstg
55~125
°C
JEITA
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-4E1C
Weight: 0.13 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
IGSS
V (BR) GDS
VGS = 25 V, VDS = 0
VDS = 0, IG = 100 μA
IDSS
VDS = −10 V, VGS = 0
(Note)
VGS (OFF)
Yfs
Ciss
Crss
NF (1)
VDS = −10 V, ID = −0.1 μA
VDS = −10 V, VGS = 0, f = 1 kHz
VDS = −10 V, VGS = 0, f = 1 MHz
VGD = 10 V, ID = 0, f = 1 MHz
VDS = −10 V, ID = −1 mA, RG = 1 kΩ,
f = 10 Hz
NF (2)
VDS = −10 V, ID = −1 mA, RG = 1 kΩ,
f = 1 kHz
Note: IDSS classification GR: 2.6~6.5 mA, BL: 6.0~12 mA, V: 10~20 mA
Min Typ. Max Unit
1.0
nA
25
V
2.6
20 mA
0.15
2.0
V
8
22
mS
105
pF
32
pF
1.0
10
dB
0.5
2
1
2007-11-01
 

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