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J107 View Datasheet(PDF) - Toshiba

Part NameDescriptionManufacturer
J107 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type Toshiba
Toshiba Toshiba
J107 Datasheet PDF : 5 Pages
1 2 3 4 5
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ107
For Audio Amplifier, Analog Switch, Constant Current
and Impedance Converter Applications
2SJ107
Unit: mm
High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V)
Low RDS (ON): RDS (ON) = 40 (typ.)
Small package
Complementary to 2SK366
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
VGDS
IG
PD
Tj
Tstg
25
V
10
mA
200
mW
125
°C
55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEDEC
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEITA
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
TOSHIBA
2-4E1C
Weight: 0.13 g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Drain-source ON resistance
IGSS
VGS = 25 V, VDS = 0
1.0
nA
V (BR) GDS VDS = 0, IG = 100 μA
25
V
IDSS
VDS = −10 V, VGS = 0
(Note 1)
2.6
20 mA
VGS (OFF) VDS = −10 V, ID = −0.1 μA
0.2
2.0
V
VDS = −10 V, VGS = 0, f = 1 kHz
Yfs
12
30
mS
(Note 2)
Ciss
Crss
VDS = −10 V, VGS = 0, f = 1 MHz
VGD = 10 V, ID = 0, f = 1 MHz
105
pF
32
pF
RDS (ON) VDS = −10 mV, VGS = 0
(Note 2)
40
Ω
Note 1: IDSS classification GR: 2.6~6.5 mA, BL: 6~12 mA, V: 10~20 mA
Note 2: Condition of the typical value IDSS = −5 mA
1
2007-11-01
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