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J105 Ver la hoja de datos (PDF) - Toshiba

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J105 Datasheet PDF : 4 Pages
1 2 3 4
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ105
For Audio Amplifier, Analog Switch, Constant Current
and Impedance Converter Applications
2SJ105
Unit: mm
High breakdown voltage: VGDS = 50 V
High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V)
Low RDS (ON): RDS (ON) = 270 (typ.) (IDSS = 5 mA)
Complimentary to 2SK330
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
50
V
Gate current
IG
10
mA
Drain power dissipation
PD
200
mW
Junction temperature
Storage temperature range
Tj
125
°C
Tstg
55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
JEDEC
high temperature/current/voltage and the significant change in
JEITA
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-4E1B
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 0.13 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
IGSS
V (BR) GDS
VGS = 30 V, VDS = 0
VDS = 0, IG = 100 μA
IDSS
VDS = −10 V, VGS = 0
(Note)
VGS (OFF)
Yfs
RDS (ON)
Ciss
Crss
VDS = −10 V, ID = −0.1 μA
VDS = −10 V, VGS = 0, f = 1 kHz
VDS = −10 mV, VGS = 0
IDSS = −5 mA
VDS = −10 V, VGS = 0, f = 1 MHz
VDG = −10 V, ID = 0, f = 1 MHz
Note: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6~14 mA
Min Typ. Max Unit
1.0
nA
50
V
1.2
14 mA
0.3
6.0
V
1.0 4.0
mS
270
Ω
18
pF
3.6
pF
1
2007-11-01
 

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