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J105-2003 View Datasheet(PDF) - Toshiba

Part NameDescriptionManufacturer
J105(2003) TOSHIBA Field Effect Transistor Silicon P Channel Junction Type Toshiba
Toshiba Toshiba
J105 Datasheet PDF : 4 Pages
1 2 3 4
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ105
For Audio Amplifier, Analog Switch, Constant Current
and Impedance Converter Applications
2SJ105
Unit: mm
· High breakdown voltage: VGDS = 50 V
· High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V)
· Low RDS (ON): RDS (ON) = 270 (typ.) (IDSS = 5 mA)
· Complimentary to 2SK330
· Small package
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
VGDS
IG
PD
Tj
Tstg
Rating
Unit
50
V
-10
mA
200
mW
125
°C
-55~125
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
JEITA
TOSHIBA
2-4E1B
Weight: 0.13 g (typ.)
Characteristics
Symbol
Test Condition
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
IGSS
V (BR) GDS
VGS = 30 V, VDS = 0
VDS = 0, IG = 100 mA
IDSS
(Note)
VDS = -10 V, VGS = 0
VGS (OFF) VDS = -10 V, ID = -0.1 mA
ïYfsï
VDS = -10 V, VGS = 0, f = 1 kHz
RDS (ON)
Ciss
Crss
VDS = -10 mV, VGS = 0
IDSS = -5 mA
VDS = -10 V, VGS = 0, f = 1 MHz
VDG = -10 V, ID = 0, f = 1 MHz
Note: IDSS classification Y: -1.2~-3.0 mA, GR: -2.6~-6.5 mA, BL: -6~-14 mA
Min Typ. Max Unit
¾
¾
1.0
nA
50
¾
¾
V
-1.2
¾
-14 mA
0.3
¾
6.0
V
1.0
4.0
¾
mS
¾
270
¾
W
¾
18
¾
pF
¾
3.6
¾
pF
1
2003-03-25
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