2SD2449 View Datasheet(PDF) - Toshiba

Part Name

Description

View to exact match

2SD2449

Silicon NPN Triple Diffused Type (Darlington power transistor)Transistor

Toshiba 

2SD2449

TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)

2SD2449

Power Amplifier Applications

Unit: mm

· High breakdown voltage: VCEO = 160 V (min)

· Complementary to 2SB1594

Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Collector power dissipation

(Tc = 25°C)

Junction temperature

Storage temperature range

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

Rating

Unit

160

V

160

V

5

V

10

A

1

A

150

W

150

°C

−55 to 150

°C

Equivalent Circuit

COLLECTOR

BASE

JEDEC

―

JEITA

―

TOSHIBA

2-21F1A

Weight: 9.75 g (typ.)

≈ 10 Ω

EMITTER

1

2003-02-04

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