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2SD2385 View Datasheet(PDF) - Toshiba

Part Name
Description
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2SD2385 Datasheet PDF : 4 Pages
1 2 3 4
2SD2385
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 140 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 50 mA, IB = 0
hFE (1)
(Note)
VCE = 5 V, IC = 7 A
hFE (2)
VCE (sat)
VBE
fT
Cob
VCE = 5 V, IC = 12 A
IC = 7 A, IB = 7 mA
VCE = 5 V, IC = 7 A
VCE = 5 V, IC = 1 A
VCB = 10 V, IE = 0, f = 1 MHz
140
5000
2000
Note: hFE (1) classification A: 5000 to 12000, B: 9000 to 18000, C: 15000 to 30000
Typ. Max Unit
5.0
µA
5.0
µA
V
30000
2.5
V
3.0
V
30
MHz
110
pF
Marking
TOSHIBA
2SD2385
JAPAN
hFE classification (A/B/C)
Product No.
Lot No.
Explanation of Lot No.
Month of manufacture (January to December are denoted by letters A to L respectively.)
Year of manufacture (Last decimal digit of the year of manufacture)
2
2003-02-04
 

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