CR08AS-12 View Datasheet(PDF) - MITSUBISHI ELECTRIC
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CR08AS-12 Datasheet PDF : 6 Pages
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GATE CHARACTERISTICS
102
7
5
3
2
101
VFGM = 6V
7
5
PGM = 0.5W
3
PG(AV) = 0.1W
2
100
VGT = 0.8V
7
5
IGT = 100µA
3
(Tj = 25°C)
2
10–1
7
5
3
2
VGD = 0.2V
IFGM = 0.3A
10–2
10–22 3 5710–12 3 57100 2 3 57101 2 3 57102 2 3
GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
1.0
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0.1
0
–40 –20 0 20 40 60 80 100 120
JUNCTION TEMPERATURE (°C)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
1.6
θ = 30° 60° 90° 120°
1.4
180°
1.2
1.0
0.8
0.6
0.4
0.2
0
0
θ
360°
RESISTIVE, INDUCTIVE LOADS
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
AVERAGE ON-STATE CURRENT (A)
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR08AS
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
103
7 TYPICAL EXAMPLE
5
3
2
102
7
5
3
2
101
7
5
3
2
100
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
103
7 25 25 t0.7
5 ALUMINUM BOARD
3 WITH SOLDERING
2
102
7
5
3
2
101
7
5
3
2
100
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100
TIME (s)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
160
25 25 t0.7
140 ALUMINUM BOARD
WITH SOLDERING
120
θ
360°
RESISTIVE,
100
INDUCTIVE
80
LOADS
NATURAL
60
CONVECTION
θ = 30° 90° 180°
40
60° 120°
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
AVERAGE ON-STATE CURRENT (A)
Feb.1999
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