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J211 View Datasheet(PDF) - Philips Electronics

Part NameDescriptionManufacturer
J211 N-channel field-effect transistors Philips
Philips Electronics Philips
J211 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Philips Semiconductors
N-channel field-effect transistors
Product specification
J210; J211; J212
40
handbook, halfpage
IDSS
(mA)
30
MGM277
20
10
0
0
2
4 VGSoff (V) 6
VDS = 15 V; Tj = 25 °C.
Fig.2 Drain current as a function of gate-source
cut-off voltage; typical values.
handbook,1h2alfpage
yfs
(mS)
8
MGM278
4
0
0
2
4 VGSoff (V) 6
VDS = 15 V; Tj = 25 °C.
Fig.3 Common-source transfer admittance as a
function of gate-source cut-off voltage;
typical values.
80
handbook, halfpage
gos
(µS)
60
MGM279
40
20
0
0
2
4 VGSoff (V) 6
VDS = 15 V; Tamb = 25 °C.
Fig.4 Common-source output conductance as a
function of gate-source cut-off voltage;
typical values.
handbook, h8alfpage
ID
(mA)
6
4
2
0
0
2
MGM280
VGS = 0 V
200 mV
400 mV
600 mV
1.4 V
800 mV
1 V
1.2 V
4
6
8
10
VDS (V)
J210.
Tj = 25 °C.
Fig.5 Output characteristics; typical values.
1997 Dec 01
5
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