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2SD1589 View Datasheet(PDF) - Inchange Semiconductor

Part NameDescriptionManufacturer
2SD1589 Silicon NPN Power Transistors Iscsemi
Inchange Semiconductor Iscsemi
2SD1589 Datasheet PDF : 3 Pages
1 2 3
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A , IB=0
VCEsat Collector-emitter saturation voltage IC=3A ;IB=3mA
VBEsat Base-emitter saturation voltage
IC=3A; IB=3mA
ICBO
Collector cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
VCB=100V ;IE=0
IC=3A ; VCE=2V
IC=5A ; VCE=2V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=3A ;IB1=3mA
IB2=-3mA; VCC50V
RL=16.7Ω
‹ hFE Classifications
R
O
Y
2000-5000 3000-7000 5000-15000
Product Specification
2SD1589
MIN TYP. MAX UNIT
60
V
1.5
V
2.0
V
1
μA
2000
15000
500
1.0
μs
3.5
μs
1.2
μs
2
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