2SD1118 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
View to exact match
2SD1118 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1118
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min)
·High DC Current Gain-
: hFE= 300V(Min.) @IC= 1A
·Low Collector Saturation Voltage
·High Reliability
APPLICATIONS
·Switching regulators
·DC-DC converter
·Solid sate relay
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
15
V
IC
Collector Current-Continuous
10
A
IBB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
3
A
50
W
150
℃
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
2.5
℃/W
isc Website：www.iscsemi.cn
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