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2SD110 View Datasheet(PDF) - Inchange Semiconductor

Part Name
Description
View to exact match
2SD110
Iscsemi
Inchange Semiconductor Iscsemi
2SD110 Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD110
DESCRIPTION
·High Power Dissipation-
: PC= 100W@TC= 25
·High Current Capability-
: IC = 10A
APPLICATIONS
·Designed for power amplifier , power switching ,DC-DC
converter and regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
130
V
VCEO Collector-Emitter Voltage
110
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
10
A
IE
Emitter Current-Continuous
-10
A
IBB
Base Current-Continuous
3
A
PC
Collector Power Dissipation @TC=25100
W
TJ
Junction Temperature
150
Tstg
Storage Temperature
-65~150
isc Websitewww.iscsemi.cn
 

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