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2SD1113K View Datasheet(PDF) - Renesas Electronics

Part Name
Description
View to exact match
2SD1113K
Renesas
Renesas Electronics Renesas
2SD1113K Datasheet PDF : 6 Pages
1 2 3 4 5 6
2SD1113(K)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to base breakdown V(BR)CBO 300 —
voltage
Collector to emitter sustain
voltage
VCEO(sus)
300
Emitter to base breakdown
V(BR)EBO
7
voltage
Collector cutoff current
I CEO
DC current transfer ratio
hFE
500 —
Collector to emitter saturation VCE(sat)
voltage
Base to emitter saturation
VBE(sat)
voltage
Turn on time
Turn off time
Note: 1. Pulse test.
t on
2.0
t off
23
Max Unit
500 V
V
V
100 µA
1.5 V
2.0 V
µs
µs
Test conditions
IC = 0.1 mA, IE = 0
IC = 3 A, PW = 50 µs,
f = 50 Hz, L = 10 mH
IE = 50 mA, IC = 0
VCE = 300 V, RBE =
VCE = 2 V, IC = 4 A*1
IC = 4 A, IB = 40 mA*1
IC = 4 A, IB = 40 mA*1
IC = 4 A, IB1 = –IB2 = 40 mA
IC = 4 A, IB1 = –IB2 = 40 mA
Maximum Collector Dissipation Curve
60
40
20
0
50
100
150
Case temperature TC (°C)
Area of Safe Operation
50
iC (peak)
10
IC (max)
1.0
0.1
Ta = 25°C
1 shot pulse
0.01
0.005
0.5 1.0 2 5 10 20 50 100200 500
Collector to emitter voltage VCE (V)
 

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