2SC5150 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

View to exact match

2SC5150

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC5150

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0

700

V

VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB=B 1.5A

3.0

V

VBE(sat) Base-Emitter Saturation Voltage

IC= 6A; IB=B 1.5A

1.2

V

ICBO

Collector Cutoff Current

VCB= 1700V ; IE= 0

1.0 mA

IEBO

Emitter Cutoff Current

VEB= 5V ; IC= 0

10 μA

hFE-1

hFE-2

fT

COB

www.iscsemi.cn DC Current Gain

IC= 1A ; VCE= 5V

10

DC Current Gain

IC= 6A ; VCE= 5V

4

Current-Gain—Bandwidth Product

IC= 0.1A ; VCE= 10V

Output Capacitance

IE= 0 ; VCB= 10V; ftest= 1.0MHz

2

185

28

8.5

MHz

pF

Switching times

tstg

Storage Time

tf

Fall Time

ICP= 5A; IB1(end)= 1.0A; fH= 64kHz

4.0 μs

0.3 μs

isc Website：www.iscsemi.cn

2

Share Link: