Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2834 2SC2834A
DESCRIPTION
·With TO-3PN package
·High speed switching
·High VCBO
·Low collector saturation voltage
APPLICATIONS
·For high speed switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
固IN电C半H导AN体GE SEMICONDUCTOR Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2SC2834
2SC3834A
Open emitter
VCEO
Collector-emitter voltage
Open base
VALUE
800
900
500
UNIT
V
V
VEBO
Emitter-base voltage
Open collector
8
V
IC
Collector current (DC)
7
A
ICM
Collector current-peak
15
A
IB
Base current (DC)
4
A
PC
Collector power dissipation
Ta=25℃
TC=25℃
2.5
W
100
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃