2SC4056 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
View to exact match
2SC4056 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4056
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0
450
V
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A
1.0
V
VBEsat Base-emitter saturation voltage
IC=4A; IB=0.8A
1.5
V
ICBO
Collector cut-off current
ICEO
Collector cut-off current
At rated volatge
0.1
mA
IEBO
Emitter cut-off current
At rated volatge
0.1
mA
hFE-1
DC current gain
IC=4A ; VCE=5V
10
hFE-2
固IN电C半H导AN体GE SEMICONDUCTOR fT
ton
ts
tf
DC current gain
Transition frequency
Turn-on time
Storage time
Fall time
IC=1mA ; VCE=5V
IC=0.8A ; VCE=10V
IC=4A;IB1=0.8A
IB2=1.6A ,RL=37.5Ω
VBB2=4V
5
20
MHz
0.5
μs
2.0
μs
0.2
μs
2
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