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2SC3545R View Datasheet(PDF) - TY Semiconductor

Part Name
Description
View to exact match
2SC3545R
Twtysemi
TY Semiconductor Twtysemi
2SC3545R Datasheet PDF : 0 Pages
Product specification
2SC3545
Features
High Gain Bandwidth Procuct; fT = 2 000 MHz TYP.
Low Collector to Base Time Constant; CC rb’b = 4 ps TYP.
Low Feedback Capacitance; Cre = 0.48 pF TYP.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
Rating
Unit
VCBO
30
V
VCEO
15
V
VEBO
3.0
V
IC
50
mA
PT
150
mW
Tj
125
Tstg
-65 to +125
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector Cutoff Current
DC Current Gain
Collector Saturation Voltage
Gain Bandwidth Product
Output Capacitance
Collector to Base Time Constant
Symbol
Testconditons
Min
ICBO VCB = 12 V, IE = 0
hFE VCE = 10 V, IC = 5.0 mA
50
VCE(sat) IC = 10 mA, IB = 1.0 mA
fT VCE = 10 V, IE =-5.0 mA
1.3
Cob VCB = 10 V, IE = 0, f = 1.0 MHz
CC. rb’b VCE = 10 V, IE = -5.0 mA, f = 31.9 MHz
Typ
100
2.0
0.48
4
Max Unit
0.1 ìA
250
0.5 V
MHz
1.0 pF
1.0 ps
hFE Classification
Marking
T42
Rank
M/P
hFE
50 100
T43
L/Q
70 140
T44
K/R
120 250
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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