2SC3658 View Datasheet(PDF) - Quanzhou Jinmei Electronic
Part Name
Description
View to exact match
2SC3658 Datasheet PDF : 3 Pages
| |||
JMnic
Silicon NPN Power Transistors
Product Specification
2SC3658
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=5A; IB=1.25A
VBEsat Base-emitter saturation voltage
IC=5A; IB=1.25A
ICBO
Collector cut-off current
VCB=1200V; IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=1A ; VCE=5V
VECF
Diode forward voltage
IF=6A
tf
Fall time
IC=5A ; IB1=1A;IB2=-2.5A;LB=0
MIN TYP. MAX UNIT
2.0
V
1.5
V
0.5
mA
500 mA
8
2.0
V
0.5
μs
2
|
|
Share Link: 