2SC3507 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
View to exact match
2SC3507 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3507
DESCRIPTION
·
·With TO-3PFa package
·High-speed switching
·High collector-base voltage VCBO
·Satisfactory linearity of forward
current transfer ratio hFE
APPLICATIONS
·For high-speed switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
固IN电C半H导AN体GE SEMICONDUCTOR Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
CONDITIONS
Open emitter
Open base
VALUE
1000
800
UNIT
V
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
5
A
ICM
Collector current-peak
10
A
IB
Base current
3
A
PC
Collector power dissipation
TC=25℃
Ta=25℃
80
W
3
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
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