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2SC3545K View Datasheet(PDF) - NEC => Renesas Technology

Part Name
Description
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2SC3545K Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
DDAATTAA SSHHEEEETT
SILICON TRANSISTOR
2SC3545
UHF OSCILLATOR AND MIXER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
DESCRIPTION
The 2SC3545 is an NPN silicon epitaxial transistor intended for use as
UHF oscillator and mixer in a tuner of a TV receiver.
The device features stable oscillation and small frequency drift against
any change of the supply voltage and the ambient temperature.
It is designed for use in small type equipments especially
recommended for Hybrid Integrated Circuit and other applications.
FEATURES
• High Gain Bandwidth Procuct; fT = 2 000 MHz TYP.
• Low Collector to Base Time Constant; CC  rb’b = 4 ps TYP.
• Low Feedback Capacitance; Cre = 0.48 pF TYP.
PACKAGE DIMENSIONS
(Units: mm)
2.8±0.2
1.5
0.65
+0.1
0.15
2
1
3
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Maximum Voltages and Current
Collector to Base Voltage
VCBO
30
V
Collector to Emitter Voltage
VCEO
15
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
50
mA
Maximum Power Dissipation
Total Power Dissipation
PT
150
mW
Maximum Temperature
Junction Temperature
Tj
125
C
Storage Temperature
Tstg
65 to +125 C
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC
SYMBOL MIN. TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
ICBO
0.1
A VCB = 12 V, IE = 0
DC Current Gain
hFE
50
100
250
VCE = 10 V, IC = 5.0 mA
Collector Saturation Voltage
VCE(sat)
0.5
V IC = 10 mA, IB = 1.0 mA
Gain Bandwidth Product
fT
1.3
2.0
MHz VCE = 10 V, IE = 5.0 mA
Output Capacitance
Cob
0.48
1.0
pF VCB = 10 V, IE = 0, f = 1.0 MHz
Collector to Base Time Constant
CC  rb’b
4
10
ps VCE = 10 V, IE = 5.0 mA, f = 31.9 MHz
hFE Classification
Class
M/P *
L/Q *
K/R *
Marking
T42
T43
T44
hFE
50 to 100
70 to 140
120 to 250 * Old Specification / New Specification
Document No. P10358EJ2V1DS00 (2nd edition)
Date Published March 1997 N
Printed in Japan
©
1984
 

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